BSP324_09 INFINEON [Infineon Technologies AG], BSP324_09 Datasheet - Page 6

• Manufacturer Part Number: BSP324_09
• Description: SIPMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
10
pF
10
10
10
130
Ω
110
100
90
80
70
60
50
40
30
20
10
0
-60
3
2
1
0
0
DS
BSP324
= f (T
)
-20
D
5
GS
j
)
= 0.17 A, V
=0, f=1 MHz, T
20
10
98%
typ
Crss
Coss
60
15
Ciss
GS
= 10 V
100
20
j
= 25 °C
°C
V
T
V
j
DS
180
30
Page 6
Rev. 2.1
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
2.6
2.2
1.8
1.6
1.4
1.2
0.8
0.6
A
V
2
1
-1
-2
-3
-60
0
0
= f (T j )
SD
BSP324
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
I
2%
D
1.6
60
typ.
=94µA
98%
2
100
2009-08-18
2.4
BSP324
°C
T j
V
V
SD
160
3