E28F320J5100 Intel, E28F320J5100 Datasheet - Page 43
E28F320J5100
Manufacturer Part Number
E28F320J5100
Description
Manufacturer
Intel
Datasheet
1.E28F320J5100.pdf
(53 pages)
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6.4 DC Characteristics
I
I
I
I
I
I
I
I
LI
LO
CCS
CCD
CCR
CCW
CCE
CCES
Sym
PRELIMINARY
Input and V
Current
Output Leakage
Current
V
V
Current
V
V
Lock-Bit Current
V
Clear Block Lock-Bits
Current
V
Suspend Current
CC
CC
CC
CC
CC
CC
Block Erase or
Standby Current
Power-Down
Read Current
Program or Set
Block Erase
Parameter
PEN
Load
INTEL
Notes
1,3,5
1,5,6
1,6,7
1,6,7
1,2
1
1
®
StrataFlash™ MEMORY TECHNOLOGY, 32 AND 64 MBIT
0.71
Typ
450
325
210
80
80
35
45
35
40
35
40
Max
150
900
650
400
125
55
65
60
70
70
80
10
10
2
1
Unit
mA
mA
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
A
V
V
V
CMOS Inputs, V
CMOS Inputs, RP# = V
CMOS Inputs, RP# = V
CMOS Inputs, RP# = V
TTL Inputs, V
RP# = GND ± 0.2V
I
CMOS Inputs, V
Device is enabled (see Table 2, Chip Enable
f = 5 MHz
I
TTL Inputs ,V
Device is enabled (see Table 2, Chip Enable
f = 5 MHz
I
CMOS Inputs, V
TTL Inputs, V
CMOS Inputs, V
TTL Inputs, V
Device is disabled (see Table 2, Chip Enable
OUT
OUT
OUT
CC
IN
CC
V
CE
CE
CE
CE
CE
CE
Truth Table )
Truth Table )
Truth Table )
= V
= V
= V
(STS) = 0 mA
= 0 mA
= 0 mA
IN
0
0
2
1
0
0
CC
= V
CC
CC
= CE
= CE
= GND, CE
= CE
= CE
= CE
or GND
CC
Max
Max
1
1
2
2
1
CC
CC
PEN
PEN
or GND
Test Conditions
= CE
= CE
= GND, CE
= GND, CE
= CE
CC
CC
PEN
PEN
= V
= V
= V
= V
= V
= V
0
2
2
2
CC
CC
= V
= V
= CE
CC
CC
= RP# = V
= V
= RP# = V
CC
CCQ
Max,
Max
CC
CC
CC
CC
CC
CCQ2
Max,
= V
= V
1
= V
0
1
=V
= V
= V
= V
CC
CC
CC
CC
Min
CCQ2
CCQ2
CCQ2
CCQ1
IH
Max,
Max,
Max,
Max
Min
Min or
Min
± 0.2 V
43
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