BSS314PEH6327XT Infineon Technologies, BSS314PEH6327XT Datasheet - Page 2

• Manufacturer Part Number: BSS314PEH6327XT
• Description: MOSFET OptiMOS -P 3 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS314PEH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 1.5 A
• Resistance Drain-source Rds (on): 140 mOhms at - 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 2.8 ns
• Gate Charge Qg: - 2.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.9 ns
• Typical Turn-off Delay Time: 12.4 ns
• Part # Aliases: BSS314PE BSS314PEH6327XTSA1 H6327

Rev 2.3
1)
sides of the PCB.
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint
V
V
V
T
V
T
V
V
I
V
|V
I
D
D
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=-1.2A
=-1.2 A
DS
page 2
= 0V, I
=V
=-30V, V
=-30V, V
=-20V, V
=-4.5V,
=-10V, I
|>2|I
GS
, I
D
|R
D
D
=-250µA
=-6.3µA
D
DS(on)max
GS
GS
DS
=-1.5A
=0 V,
=0V,
=0V
1)
,
min.
-30
-1
-
-
-
-
-
-
Values
typ.
-1.5
153
107
3
-
-
-
-
-
max.
-100
250
230
140
BSS314PE
-2
-1
-5
-
-
2012-10-19
mA
μA
Unit
K/W
V
mW
S