BSS314PEH6327XT Infineon Technologies, BSS314PEH6327XT Datasheet - Page 8

• Manufacturer Part Number: BSS314PEH6327XT
• Description: MOSFET OptiMOS -P 3 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS314PEH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 1.5 A
• Resistance Drain-source Rds (on): 140 mOhms at - 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 2.8 ns
• Gate Charge Qg: - 2.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.9 ns
• Typical Turn-off Delay Time: 12.4 ns
• Part # Aliases: BSS314PE BSS314PEH6327XTSA1 H6327

Rev 2.3
Package Outline:
Footprint:
Dimensions in mm
SOT-23
Packaging:
page 8
BSS314PE
2012-10-19