BSS314PEH6327XT Infineon Technologies, BSS314PEH6327XT Datasheet - Page 4

• Manufacturer Part Number: BSS314PEH6327XT
• Description: MOSFET OptiMOS -P 3 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS314PEH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 1.5 A
• Resistance Drain-source Rds (on): 140 mOhms at - 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 2.8 ns
• Gate Charge Qg: - 2.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.9 ns
• Typical Turn-off Delay Time: 12.4 ns
• Part # Aliases: BSS314PE BSS314PEH6327XTSA1 H6327

Rev 2.3
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
0.375
0.125
0.25
10
10
10
10
10
10
0.5
DS
-1
-2
-3
-4
0
1
0
A
10
); T
)
0
-2
A
p
=25 °C; D =0
10
40
-1
V
T
DS
A
10
[°C]
80
[V]
0
DC
10 ms
10
100 µs
1 ms
120
1
10 µs
1 µs
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
10
10
10
10
1.6
1.2
0.8
0.4
A
-1
0
3
2
1
0
); V
10
p
0
)
-5
single pulse
GS
0.01
0.02
0.05
≤-10 V
20
0.5
0.2
10
0.1
p
-4
/T
40
10
-3
60
10
T
-2
tp [s]
A
80
[°C]
10
100
-1
10
120
0
BSS314PE
2012-10-19
10
140
1
160
10
2