BSS314PEH6327XT Infineon Technologies, BSS314PEH6327XT Datasheet - Page 5

• Manufacturer Part Number: BSS314PEH6327XT
• Description: MOSFET OptiMOS -P 3 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS314PEH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 1.5 A
• Resistance Drain-source Rds (on): 140 mOhms at - 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 2.8 ns
• Gate Charge Qg: - 2.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.9 ns
• Typical Turn-off Delay Time: 12.4 ns
• Part # Aliases: BSS314PE BSS314PEH6327XTSA1 H6327

Rev 2.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
DS
GS
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
); T
); |V
0
0
j
=25 °C
DS
GS
10 V
|>2|I
1
1
5 V
D
4.5 V
|R
DS(on)max
2
2
V
V
GS
DS
150 °C
[V]
[V]
3
3
25 °C
4 V
3.3 V
3 V
3.5 V
2.8 V
4
4
page 5
5
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
500
450
400
350
300
250
200
150
100
50
D
=f(I
0
8
7
6
5
4
3
2
1
0
); T
0
0
D
3 V
j
); T
=25 °C
GS
1
j
=25 °C
1
3.3 V
2
2
3
I
I
D
D
3
4
[A]
[A]
5
4
10 V
6
BSS314PE
5 V
4.5 V
4 V
2012-10-19
5
7
6
8