FDPC8012S Fairchild Semiconductor, FDPC8012S Datasheet
FDPC8012S
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FDPC8012S Summary of contents
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... Package Marking and Ordering Information Device Marking Device 01OD/03OD FDPC8012S ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev.C General Description This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected enable easy placement and routing of synchronous buck converters ...
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... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Source Gate Charge gs Q Gate to Drain “Miller” Charge gd ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev °C unless otherwise noted J Test Conditions = 250 μ mA 250 μ ...
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... Q2 181 mJ is based on starting Pulsed Id limited by junction temperature,td<=10uS. Please refer to SOA curve for more details. ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev °C unless otherwise noted J Test Conditions ...
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... μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev 25°C unless otherwise noted 2 μ 0.6 0.8 1 ...
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... C/W θ JA DERIVED FROM TEST DATA A 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev 25°C unless otherwise noted J 5000 = 10 V 1000 = 15 V 100 100 ...
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... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev 25°C unless otherwise noted J SINGLE PULSE 151 C/W θ JA (Note 1c RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
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... DUTY CYCLE = 0.5% MAX 100 125 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 18. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev °C unless otherwise noted μ s 0.6 0.8 Figure 15. Normalized on-Resistance vs Drain 50 75 100 125 150 200 100 C o ...
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... 135 C/W θ JA DERIVED FROM o TEST DATA 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 24. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev 25°C unless otherwise noted J 10000 100 ...
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... Typical Characteristics (Q2 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 1 0 0.5 0.2 0.1 0.05 0.01 0.02 0.01 1E-3 1E Figure 26. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev °C unless otherwise noted J SINGLE PULSE 135 C/W θ JA (Note 1d RECTANGULAR PULSE DURATION (sec) 9 ...
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... SyncFET Schottky body diode Characteristics TM Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDPC8012S ...
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... LSG 8,PAD 9 V+, V+(HSD) PAD Table 1. Pin Information ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev.C Description Gate signal input of Q1 Gate Switch or Phase node, Source of Q1 and Drain of Q2 Ground, Source of Q2 Gate signal input of Q2 Gate Input voltage of SR Buck converter, Drain www ...
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... FET packages. In most cases, board ground will be the most effective heat transfer path on the PCB. Use a large copper area between GND / GND(LSS)PAD pins and board ground. To ensure the best thermal and electrical connection to ground, we recommend using multiple vias to interconnect ground plane layers as shown in Figure 3. 1.Patent Pending ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev.C 12 www.fairchildsemi.com ...
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... Vias should be relatively large, around 8 mils to 10 mils. "Avoid using narrow thermal relief traces on the V+ / V+(HSD) PAD and GND / GND(LSS)PAD pins. These will increase HF switch loop inductance. And these will increase ringing of the HF power loop and the SW node. ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev.C 13 www.fairchildsemi.com ...
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... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev.C 14 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDPC8012S Rev.C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...