FDPC8012S Fairchild Semiconductor, FDPC8012S Datasheet - Page 9

• Manufacturer Part Number: FDPC8012S
• Description: MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
• Manufacturer: Fairchild Semiconductor

Specifications of FDPC8012S

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Dual Asymmetric
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerClip 33
• Fall Time: 3 ns
• Forward Transconductance Gfs (max / Min): 200 S
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 3 ns
• Typical Turn-off Delay Time: 34 ns

FDPC8012S Rev.C
©2012 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
1E-3
1E-4
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 26. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
(Note 1d)
θ
JA
= 135
10
-2
o
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
-1
9
T
J
= 25 °C unless otherwise noted
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
1
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
100
2
θJA
t
1
+ T
t
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2
A
1000