FDPC8012S Fairchild Semiconductor, FDPC8012S Datasheet - Page 13

• Manufacturer Part Number: FDPC8012S
• Description: MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
• Manufacturer: Fairchild Semiconductor

Specifications of FDPC8012S

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Dual Asymmetric
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerClip 33
• Fall Time: 3 ns
• Forward Transconductance Gfs (max / Min): 200 S
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 3 ns
• Typical Turn-off Delay Time: 34 ns

"Use multiple vias in parallel on each copper region to interconnect top, inner and bottom layers. This will reduce resistance and
inductance of the vias and will improve thermal conductivity. Vias should be relatively large, around 8 mils to 10 mils.
"Avoid using narrow thermal relief traces on the V+ / V+(HSD) PAD and GND / GND(LSS)PAD pins. These will increase HF switch
loop inductance. And these will increase ringing of the HF power loop and the SW node.
©2012 Fairchild Semiconductor Corporation
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FDPC8012S Rev.C