AT45DB642D-TU Atmel, AT45DB642D-TU Datasheet - Page 22

IC FLASH 64MBIT 66MHZ 28TSOP

AT45DB642D-TU

Manufacturer Part Number
AT45DB642D-TU
Description
IC FLASH 64MBIT 66MHZ 28TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT45DB642D-TU

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
64M (8192 pages x 1056 bytes)
Speed
66MHz
Interface
Parallel/Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP
Density
64Mb
Access Time (max)
6ns
Interface Type
Parallel/Serial-SPI
Boot Type
Not Required
Address Bus
1/8Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP-I
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
8M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
28
Data Bus Width
8 bit
Architecture
Sectored
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Mounting Style
SMD/SMT
Organization
256 KB x 32
Memory Configuration
8192 Pages X 1056 Bytes
Clock Frequency
66MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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11. Additional Commands
11.1
11.2
11.3
22
Main Memory Page to Buffer Transfer
Main Memory Page to Buffer Compare
Auto Page Rewrite
AT45DB642D
A page of data can be transferred from the main memory to either buffer 1 or buffer 2. To start
the operation for the standard DataFlash page size (1056 bytes), a 1-byte opcode, 53H for buf-
fer 1 and 55H for buffer 2, must be clocked into the device, followed by three address bytes
comprised of 13 page address bits (PA12 - PA0), which specify the page in main memory that is
to be transferred, and 11 don’t care bits. To perform a main memory page to buffer transfer for
the binary page size (1024 bytes), the opcode 53H for buffer 1 or 55H for buffer 2, must be
clocked into the device followed by three address bytes consisting of 13 page address bits (A22
- A10) which specify the page in the main memory that is to be transferred, and 10 don’t care
bits. The CS pin must be low while toggling the SCK/CLK pin to load the opcode and the
address bytes from the input pins (SI or I/O7 - I/O0). The transfer of the page of data from the
main memory to the buffer will begin when the CS pin transitions from a low to a high state. Dur-
ing the transfer of a page of data (t
monitored to determine whether the transfer has been completed.
A page of data in main memory can be compared to the data in buffer 1 or buffer 2. To initiate
the operation for standard DataFlash page size, a 1-byte opcode, 60H for buffer 1 and 61H for
buffer 2, must be clocked into the device, followed by three address bytes consisting of 13 page
address bits (PA12 - PA0) that specify the page in the main memory that is to be compared to
the buffer, and 11 don’t care bits. To start a main memory page to buffer compare for a binary
page size, the opcode 60H for buffer 1 or 61H for buffer 2, must be clocked into the device fol-
lowed by three address bytes consisting of 13 page address bits (A22 - A10) that specify the
page in the main memory that is to be compared to the buffer, and 10 don’t care bits. The CS pin
must be low while toggling the SCK/CLK pin to load the opcode and the address bytes from the
input pins (SI or I/O7 - I/O0). On the low-to-high transition of the CS pin, the data bytes in the
selected main memory page will be compared with the data bytes in buffer 1 or buffer 2. During
this time (t
completion of the compare operation, bit 6 of the status register is updated with the result of the
compare.
This mode is only needed if multiple bytes within a page or multiple pages of data are modified in
a random fashion within a sector. This mode is a combination of two operations: Main Memory
Page to Buffer Transfer and Buffer to Main Memory Page Program with Built-in Erase. A page of
data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data
(from buffer 1 or buffer 2) is programmed back into its original page of main memory. To start the
rewrite operation for standard DataFlash page size (1056 bytes), a 1-byte opcode, 58H for buffer
1 or 59H for buffer 2, must be clocked into the device, followed by three address bytes com-
prised of 13 page address bits (PA12-PA0) that specify the page in main memory to be rewritten
and 11 don’t care bits. To initiate an auto page rewrite for a binary page size (1024 bytes), the
opcode 58H for buffer 1 or 59H for buffer 2, must be clocked into the device followed by three
address bytes consisting of 13 page address bits (A22 - A10) that specify the page in the main
memory that is to be written and 10 don’t care bits. When a low-to-high transition occurs on the
CS pin, the part will first transfer data from the page in main memory to a buffer and then pro-
gram the data from the buffer back into same page of main memory. The operation is internally
self-timed and should take place in a maximum time of t
and the RDY/BUSY pin will indicate that the part is busy.
COMP
), the status register and the RDY/BUSY pin will indicate that the part is busy. On
XFR
), the status register can be read or the RDY/BUSY can be
EP
. During this time, the status register
3542K–DFLASH–04/09

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