MT28F320J3RG-11 GMET TR Micron Technology Inc, MT28F320J3RG-11 GMET TR Datasheet - Page 19

• Manufacturer Part Number: MT28F320J3RG-11 GMET TR
• Description: IC FLASH 32MBIT 110NS 56TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT28F320J3RG-11 GMET TR

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

System Interface Information
mizing system interface software.
Table 10: System Interface Information
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
OFFSET
Table 10 provides useful information about opti-
1Dh
1Bh
1Ch
1Eh
20h
21h
22h
23h
24h
25h
26h
1Fh
LENGTH DESCRIPTION
1
1
1
1
1
1
1
1
1
1
1
1
V
Bits 0–3 BCD 100mV
Bits 4–7 BCD volts
V
Bits 0–3 BCD 100mV
Bits 4–7 BCD volts
V
Bits 0–3 BCD 100mV
Bits 4–7 Hex volts
V
Bits 0–3 BCD 100mV
Bits 4–7 Hex volts
“n” such that typical single word program timeout = 2
“n” such that typical max. buffer write timeout = 2
“n” such that typical block erase timeout = 2
“n” such that typical full chip erase timeout = 2
“n” such that word program timeout = 2
“n” such that typical max. buffer write timeout = 2
typical
“n” such that maximum block erase timeout = 2
“n” such that maximum chip erase timeout = 2
CC
CC
PP
PP
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
19
n
times typical
n
µs
Micron Technology, Inc., reserves the right to change products or specifications without notice.
n
n
n
ms
times typical
times typical
n
n
ms
times
n
µs
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
ADDRESS
1Dh
1Bh
1Ch
1Eh
20h
21h
22h
23h
24h
25h
26h
1Fh
CODE
HEX
©2000 Micron Technology. Inc.
0A
27
36
00
00
07
07
00
04
04
04
00
VALUE
128µs
128µs
2.7V
3.6V
0.0V
0.0V
2ms
2ms
N/A
N/A
16s
1s