MT28F320J3RG-11 GMET TR Micron Technology Inc, MT28F320J3RG-11 GMET TR Datasheet - Page 20

• Manufacturer Part Number: MT28F320J3RG-11 GMET TR
• Description: IC FLASH 32MBIT 110NS 56TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT28F320J3RG-11 GMET TR

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Device Geometry Definition
the device geometry.
Table 11: Device Geometry Definitions
Table 12: Device Geometry Definition Codes
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
OFFSET
Tables 11 and 12 provide important details about
2Ah
2Dh
27h
28h
2Ch
ADDRESS
LENGTH
2Ah
2Dh
27h
28h
29h
2Bh
2Ch
2Eh
30h
2Fh
1
2
2
1
4
“n” such that device size= 2
Flash device interface: x8 async, x16 async, x8/x16 async; 28:00
29:00, 28:01 29:00, 28:02 29:00
“n” such that maximum number of bytes in write buffer = 2n
Number of erase block regions within device:
Erase Block Region 1 Information
Bits 0–15 = y; y + 1 = number of identical-size erase blocks
Bits 16–31 = z; region erase block(s) size are z x 256 bytes
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
one or more contiguous same-size erase blocks
32Mb
16
02
00
05
00
01
00
00
02
1F
DESCRIPTION
n
in number of bytes
20
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64Mb
17
02
00
05
00
01
3F
00
00
02
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
2Ah
2Dh
27h
28h
29h
2Bh
2Ch
2Eh
30h
2Fh
(see table 12 below)
CODE
128Mb
02
00
05
00
01
©2000 Micron Technology. Inc.
18
02
00
05
00
01
00
00
02
7F
x8/x16
32
1