THNCF512MDG Toshiba, THNCF512MDG Datasheet - Page 33

• Manufacturer Part Number: THNCF512MDG
• Description: MEMORY CARD COMPACT FLASH 512MB
• Manufacturer: Toshiba

Specifications of THNCF512MDG

• Memory Size: 512MB
• Memory Type: CompactFLASH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC CHARACTERISTICS
Input Characteristics
Output Drive Characteristics
I
I
−I
−I
I
I
SYMBOL
Type
Type
LI
LO
CCS
CCO
PU
PD
1
2
3
4
1
V
V
V
V
V
V
∆Vt
V
V
∆Vt
V
V
SYMBOL
SYMBOL
IH
IL
IH
IL
T+
T-
T+
T-
OH
OL
Input leakage current
Output leakage current
Pull-up current (Resistivity)
Pull-down current (Resistivity)
Power down mode current
Operating current @ 3.3V
Operating current @ 5V
Write operation
Read operation
Write operation
Read operation
PARAMETER
Input High Voltage CMOS
Input Low Voltage CMOS
Input High Voltage
(3.3V : CMOS 5V: TTL)
Input Low Voltage
(3.3V : CMOS 5V: TTL)
Input Low to High threshold
Schmitt trigger
Input High to Low threshold
Schmitt trigger
Hysteresis voltage
Input Low to High threshold
Schmitt trigger
Input High to Low threshold
Schmitt trigger
Hysteresis voltage
Output High Voltage
Output Low Voltage
PARAMETER
(V
CC
PARAMETER
= 3.3 V ± 5%, 5 V ± 0.5V
MIN










TENTATIVE
V
CC
MAX
MIN









1
1
− 0.8
MIN
2.0
2.0
2.0
2.0
0.9
0.9
0.5
0.8
1.0
0.8
0.5
0.8




Gnd + 0.4
−43 (75)
,
43 (75)
TYP.
MAX
Ta = 0°C
380
750
25
21
28
23



MAX
1.0
1.0
1.0
0.8
2.5
2.5
2.3
2.0




~
µA (kΩ)
µA (kΩ)
TYP
UNIT
70°C)
mA
mA


THNCFxxxxDG Series
µA
µA
µA
TYP
2.1
2.1
1.2
1.2
2.1
1.8
1.2
1.1




UNIT
UNIT
V
V
V
V
V
V
V
OUT
FORCE
FORCE
CC
CC
CC
CC
V
V
2004-05-18 33/44
TEST CONDITIONS
= 3.3V
= 5V
= 3.3V operation
= 5V operation
= high impedance
= 3.3V
= 0V
CONDITION
V
V
V
V
V
V
V
V
V
V
CONDITION
I
V
V
V
V
V
V
V
V
V
V
OH

I
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
OL
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
= −4mA
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 4mA
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V