MPC8313E-RDB Freescale Semiconductor, MPC8313E-RDB Datasheet - Page 14

• Manufacturer Part Number: MPC8313E-RDB
• Description: BOARD PROCESSOR
• Manufacturer: Freescale Semiconductor
• Series: PowerQUICC II™ PROr
• Type: MCUr

Specifications of MPC8313E-RDB

• Contents: Reference Design Board, Software and Documentation
• Termination Type: SMD
• Supply Voltage Max: 1.05V
• Tool / Board Applications: Wired Connectivity-LIN, CAN, Ethernet, USB
• Mcu Supported Families: POWERQUICC II PRO
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Silicon Manufacturer: Freescale
• Silicon Core Number: MPC83xx
• Kit Application Type: Communication & Networking
• Application Sub Type: Ethernet
• Core Architecture: Power Architecture
• Silicon Family Name: PowerQUICC II PRO
• For Use With/related Products: MPC8313E
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DDR and DDR2 SDRAM
Table 11
6
This section describes the DC and AC electrical specifications for the DDR SDRAM interface. Note that
DDR SDRAM is GV
6.1
Table 12
GV
14
Time for the device to turn on POR configuration signal drivers with respect to
the negation of HRESET
Notes:
1. t
2. t
3. POR configuration signals consists of CFG_RESET_SOURCE[0:2] and CFG_CLKIN_DIV.
PLL lock times
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
clock is applied to the SYS_CLK_IN input, and PCI_SYNC_IN period depends on the value of CFG_CLKIN_DIV.
noise on MV
equal to MV
PCI_SYNC_IN
SYS_CLK_IN
DD
TT
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
(typ) = 1.8 V
DDR and DDR2 SDRAM
is expected to be within 50 mV of the DRAM GV
is expected to be equal to 0.5 × GV
provides the PLL lock times.
provides the recommended operating conditions for the DDR2 SDRAM component(s) when
Parameter/Condition
DDR and DDR2 SDRAM DC Electrical Characteristics
is the clock period of the input clock applied to SYS_CLK_IN. It is only valid when the device is in PCI host mode.
REF
is the clock period of the input clock applied to PCI_SYNC_IN. When the device is In PCI host mode the primary
REF
Table 12. DDR2 SDRAM DC Electrical Characteristics for GV
. This rail should track variations in the DC level of MV
may not exceed ±2% of the DC value.
OUT
OUT
MPC8313E PowerQUICC
Parameter/Condition
.
Table 10. RESET Initialization Timing Specifications (continued)
DD
= 0.280 V)
= 1.420 V)
Parameter/Condition
(typ) = 2.5 V and DDR2 SDRAM is GV
DD
Table 11. PLL Lock Times
, and to track GV
™
Symbol
MV
GV
V
II Pro Processor Hardware Specifications, Rev. 3
V
I
I
V
I
OH
OZ
OL
TT
REF
IH
IL
DD
DD
at all times.
≤
V
MV
OUT
MV
DD
0.49 × GV
REF
DC variations as measured at the receiver. Peak-to-peak
REF
≤
–13.4
–0.3
–9.9
13.4
Min
1.7
GV
+ 0.125
– 0.04
REF
DD
Min
DD
.
—
.
DD
Min
(typ) = 1.8 V.
1
MV
MV
0.51 × GV
GV
REF
DD
REF
DD
Max
Max
1.9
9.9
—
—
—
(typ) = 1.8 V
Max
100
– 0.125
+ 0.04
+ 0.3
DD
Freescale Semiconductor
t
PCI_SYNC_IN
Unit
Unit
Unit
mA
mA
μA
μs
V
V
V
V
V
Notes
Notes
Notes
1, 3
—
—
—
—
—
2
1
3
4