MPC8313E-RDB Freescale Semiconductor, MPC8313E-RDB Datasheet - Page 15
![BOARD PROCESSOR](/photos/9/23/92379/mfg_mpc8313e-rdb_sml.jpg)
MPC8313E-RDB
Manufacturer Part Number
MPC8313E-RDB
Description
BOARD PROCESSOR
Manufacturer
Freescale Semiconductor
Series
PowerQUICC II™ PROr
Type
MCUr
Datasheets
1.MPC8313CZQAFFB.pdf
(100 pages)
2.MPC8313E-RDBB.pdf
(52 pages)
3.MPC8313E-RDBB.pdf
(2 pages)
Specifications of MPC8313E-RDB
Contents
Reference Design Board, Software and Documentation
Termination Type
SMD
Supply Voltage Max
1.05V
Tool / Board Applications
Wired Connectivity-LIN, CAN, Ethernet, USB
Mcu Supported Families
POWERQUICC II PRO
Rohs Compliant
Yes
Filter Terminals
SMD
Silicon Manufacturer
Freescale
Silicon Core Number
MPC83xx
Kit Application Type
Communication & Networking
Application Sub Type
Ethernet
Core Architecture
Power Architecture
Silicon Family Name
PowerQUICC II PRO
For Use With/related Products
MPC8313E
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 13
Table 14
GV
Table 15
Freescale Semiconductor
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. GV
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS
Delta input/output capacitance: DQ, DQS
Note:
1. This parameter is sampled. GV
noise on MV
equal to MV
DD
TT
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
(typ) = 2.5 V
is expected to be within 50 mV of the DRAM GV
is expected to be equal to 0.5 × GV
provides the DDR2 capacitance when
provides the recommended operating conditions for the DDR SDRAM component(s) when
provides the DDR capacitance when
Parameter/Condition
Parameter/Condition
REF
REF
Parameter/Condition
. This rail should track variations in the DC level of MV
Table 14. DDR SDRAM DC Electrical Characteristics for GV
may not exceed ±2% of the DC value.
OUT
OUT
MPC8313E PowerQUICC
.
= 0.35 V)
= 1.95 V)
Table 13. DDR2 SDRAM Capacitance for GV
Table 15. DDR SDRAM Capacitance for GV
DD
DD
= 1.8 V ± 0.090 V, f = 1 MHz, T
= 2.5 V ± 0.125 V, f = 1 MHz, T
DD
, and to track GV
™
II Pro Processor Hardware Specifications, Rev. 3
Symbol
MV
GV
V
V
I
V
I
I
Symbol
OH
GV
OZ
OL
TT
REF
IH
IL
DD
C
GV
DD
C
DIO
DD
IO
Symbol
at all times.
DD
≤
C
C
(typ) = 2.5 V.
V
DIO
(typ) =
IO
OUT
DD
MV
MV
A
0.49 × GV
DC variations as measured at the receiver. Peak-to-peak
A
≤
= 25°C, V
= 25°C, V
GV
REF
1.8 V.
REF
–16.2
–0.3
–9.9
16.2
REF
Min
2.3
DD
– 0.04
+ 0.15
Min
.
—
.
6
Min
DD
—
OUT
6
DD
OUT
DD
(typ) = 2.5 V
(typ) = 1.8 V
= GV
= GV
MV
MV
0.51 × GV
GV
DD
DD
DD
REF
REF
/2, V
DD
(typ) = 2.5 V
/2, V
Max
–9.9
2.7
Max
—
—
0.5
Max
0.5
8
+ 0.04
+ 0.3
– 0.15
8
OUT
OUT
DD
(peak-to-peak) = 0.2 V.
(peak-to-peak) = 0.2 V.
DDR and DDR2 SDRAM
Unit
Unit
Unit
mA
mA
μA
pF
pF
pF
pF
V
V
V
V
V
Notes
Notes
Notes
—
—
—
—
1
1
2
1
1
1
3
4
15