ATTINY2313-20PU Atmel, ATTINY2313-20PU Datasheet - Page 173

• Manufacturer Part Number: ATTINY2313-20PU
• Description: IC MCU AVR 2K FLASH 20DIP
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY2313-20PU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-DIP (0.300", 7.62mm)
• Package: 20PDIP
• Device Core: AVR
• Family Name: ATtiny
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 18
• Interface Type: SPI/USART/USI
• Number Of Timers: 2
• Processor Series: ATTINY2x
• Core: AVR8
• Data Ram Size: 128 B
• Maximum Clock Frequency: 20 MHz
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• Cpu Family: ATtiny
• Device Core Size: 8b
• Frequency (max): 20MHz
• Total Internal Ram Size: 128Byte
• # I/os (max): 18
• Number Of Timers - General Purpose: 2
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 2.7V
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 20
• Package Type: PDIP
• For Use With: ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Serial Programming
Algorithm
2543L–AVR–08/10
When writing serial data to the ATtiny2313, data is clocked on the rising edge of SCK.
When reading data from the ATtiny2313, data is clocked on the falling edge of SCK. See
79,
To program and verify the ATtiny2313 in the serial programming mode, the following sequence
is recommended (See four byte instruction formats in
1. Power-up sequence:
2. Wait for at least 20 ms and enable serial programming by sending the Programming
3. The serial programming instructions will not work if the communication is out of synchro-
4. The Flash is programmed one page at a time. The memory page is loaded one byte at a
5. A: The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
Figure 80
Apply power between V
tems, the programmer can not guarantee that SCK is held low during power-up. In this
case, RESET must be given a positive pulse of at least two CPU clock cycles duration
after SCK has been set to “0”.
Enable serial instruction to pin MOSI.
nization. When in sync. the second byte (0x53), will echo back when issuing the third
byte of the Programming Enable instruction. Whether the echo is correct or not, all four
bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
time by supplying the 4 LSB of the address and data together with the Load Program
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the 6 MSB of
the address. If polling (
issuing the next page. (See
interface before the Flash write operation completes can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling
must wait at least t
In a chip erased device, no 0xFFs in the data file(s) need to be programmed.
B: The EEPROM array is programmed one page at a time. The Memory page is loaded
one byte at a time by supplying the 2 LSB of the address and data together with the Load
EEPROM Memory Page instruction. The EEPROM Memory Page is stored by loading
the Write EEPROM Memory Page Instruction with the 5 MSB of the address. When using
EEPROM page access only byte locations loaded with the Load EEPROM Memory Page
instruction is altered. The remaining locations remain unchanged. If polling (
not used, the used must wait at least t
77 on page
programmed.
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
CC
power off.
and
174). In a chip erased device, no 0xFF in the data file(s) need to be
Table 79
WD_EEPROM
RDY/BSY
for timing details.
CC
and GND while RESET and SCK are set to “0”. In some sys-
Table 77 on page
before issuing the next byte. (See
) is not used, the user must wait at least t
WD_EEPROM
174.) Accessing the serial programming
before issuing the next page (See
Table 78 on page
(RDY/BSY
Table 77 on page
) is not used, the user
174):
WD_FLASH
RDY/BSY
before
Table
174.)
Figure
) is
173