ATTINY25V-10MU Atmel, ATTINY25V-10MU Datasheet - Page 146

IC MCU AVR 2K FLASH 10MHZ 20-QFN

ATTINY25V-10MU

Manufacturer Part Number
ATTINY25V-10MU
Description
IC MCU AVR 2K FLASH 10MHZ 20-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheets

Specifications of ATTINY25V-10MU

Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-MLF®, QFN
Processor Series
ATTINY2x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
USI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
4-ch x 10-bit
For Use With
ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIPATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATTINY25V-10MU
Manufacturer:
ATMEL
Quantity:
1 650
Part Number:
ATTINY25V-10MU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
19.3
19.4
146
Performing a Page Write
Addressing the Flash During Self-Programming
ATtiny25/45/85
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
To execute Page Write, set up the address in the Z-pointer, write “00000101” to SPMCSR and
execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is ignored.
The page address must be written to PCPAGE. Other bits in the Z-pointer must be written to
zero during this operation.
Note:
The Z-pointer is used to address the SPM commands.
Since the Flash is organized in pages (see
be treated as having two different sections. One section, consisting of the least significant bits, is
addressing the words within a page, while the most significant bits are addressing the pages.
This is shown in
addressed independently. Therefore it is of major importance that the software addresses the
same page in both the Page Erase and Page Write operation.
The LPM instruction uses the Z-pointer to store the address. Since this instruction addresses the
Flash byte-by-byte, also the LSB (bit Z0) of the Z-pointer is used.
Figure 19-1. Addressing the Flash During SPM
Note:
Bit
ZH (R31)
ZL (R30)
Z - REGISTER
The CPU is halted during the Page Write operation.
1. The different variables used in
PROGRAM MEMORY
BIT
15
Z15
Z7
7
PAGE
PROGRAM
COUNTER
15
Figure
PAGE ADDRESS
WITHIN THE FLASH
ZPCMSB
14
Z14
Z6
6
PCMSB
19-1. Note that the Page Erase and Page Write operations are
PCPAGE
13
Z13
Z5
5
Figure 19-1
ZPAGEMSB
12
Z12
Z4
4
PAGEMSB
Table 20-8 on page
PCWORD
WORD ADDRESS
WITHIN A PAGE
(1)
are listed in
11
Z11
Z3
3
1
0
0
INSTRUCTION WORD
10
Z10
Z2
2
PAGE
Table 20-8 on page
154), the Program Counter can
9
Z9
Z1
1
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
8
Z8
Z0
0
154.
2586M–AVR–07/10

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