MCIMX355AJQ5CR2 Freescale Semiconductor, MCIMX355AJQ5CR2 Datasheet - Page 20

• Manufacturer Part Number: MCIMX355AJQ5CR2
• Description: MULTIMEDIA PROCESSOR 400-MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX35r

Specifications of MCIMX355AJQ5CR2

• Core Processor: ARM11
• Core Size: 32-Bit
• Speed: 532MHz
• Connectivity: 1-Wire, CAN, EBI/EMI, Ethernet, I²C, MMC, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Type: ROMless
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.33 V ~ 1.47 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 400-MAPBGA
• Processor Series: i.MX355
• Core: ARM1136JF-S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details

1
The method for obtaining max current is as follows:
4.6
The thermal resistance characteristics for the device are given in
under the following conditions:
20
QVCC
MVDD, PVDD
NVCC_EMI1, NVCC_EMI2, NVCC_EMI3, NVCC_LCDC, NVCC_NFC
FUSE_VDD
NVCC_MISC, NVCC_CSI, NVCC_SDIO, NVCC_CRM, NVCC_ATA, NVCC_MLB,
NVCC_JTAG
OSC24M_VDD, OSC_AUDIO_VDD, PHY1_VDDA, PHY2_VDD,
USBPHY1_UPLLVDD, USBPHY1_VDDA_BIAS
Junction to ambient
Junction to ambient
This rail is connected to ground; it only needs a voltage if eFuses are to be programmed. FUSE_VDD should be supplied by
following the power up sequence given in
1. Measure worst case power consumption on individual rails using directed test on i.MX35.
2. Correlate worst case power consumption power measurements with worst case power
3. Combine common voltage rails based on power supply sequencing requirements
4. Guard band worst case numbers for temperature and process variation. Guard band is based on
5. The sum of individual rails is greater than real world power consumption, as a real system does
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consumption simulations.
process data and correlated with actual data measured on i.MX35.
not typically maximize power consumption on all peripherals simultaneously.
Two-layer substrate
Substrate solder mask thickness: 0.025 mm
Substrate metal thicknesses: 0.016 mm
Substrate core thickness: 0.200 mm
Core via I.D: 0.168 mm, Core via plating 0.016 mm.
Full array map design, but nearly all balls under die are power or ground.
Die Attach: 0.033 mm non-conductive die attach, k = 0.3 W/m K
Mold compound: k = 0.9 W/m K
Thermal Characteristics
1
1
1
natural convection
natural convection
Rating
i.MX35 Applications Processors for Automotive Products, Rev. 9
Power Supply
Table 12. Thermal Resistance Data
Section 4.3.1, “Powering Up.”
Table 11. Power Consumption
Single layer board (1s)
Four layer board (2s2p)
Condition
Table
12. These values were measured
Voltage (V)
1.47
1.65
1.9
3.6
3.6
3.6
Symbol
R
R
eJA
eJA
Freescale Semiconductor
Max Current (mA)
Value
53
30
400
20
90
62
60
25
ºC/W
ºC/W
Unit