MOSFET N-CH 50V 220MA SOT-23-3

BSS138K

Manufacturer Part NumberBSS138K
DescriptionMOSFET N-CH 50V 220MA SOT-23-3
ManufacturerFairchild Semiconductor
BSS138K datasheet
 


Specifications of BSS138K

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs1.6 Ohm @ 50mA, 5VDrain To Source Voltage (vdss)50V
Current - Continuous Drain (id) @ 25° C220mAVgs(th) (max) @ Id1.2V @ 250µA
Gate Charge (qg) @ Vgs2.4nC @ 10VInput Capacitance (ciss) @ Vds58pF @ 25V
Power - Max350mWMounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)2.5 Ohms
Forward Transconductance Gfs (max / Min)200 mSDrain-source Breakdown Voltage50 V
Continuous Drain Current0.22 APower Dissipation350 mW
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Gate Charge Qg2.4 nCMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesBSS138KTR
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BSS138K
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• Green Compound
• ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C
Absolute Maximum Ratings *
Symbol
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
D
T
Operating Junction Temperature Range
J
T
Storage Temperature Range
STG
* These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
Symbol
P
Total Device Dissipation
D
Derating above T
A
R
Thermal Resistance, Junction to Ambient *
θJA
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
© 2010 Fairchild Semiconductor Corporation
BSS138K Rev. A2
D
S
G
SOT - 23
Marking : SK
T
= 25°C unless otherwise noted
A
Parameter
Continuous
Pulsed
Parameter
= 25°C
1
May 2010
Value
Units
50
V
±12
V
0.22
A
0.88
°C
-55 to +150
°C
-55 to +150
Value
Units
350
mW
2.8
mW/°C
°C/W
350
www.fairchildsemi.com

BSS138K Summary of contents

  • Page 1

    ... Thermal Characteristics Symbol P Total Device Dissipation D Derating above Thermal Resistance, Junction to Ambient * θJA * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size © 2010 Fairchild Semiconductor Corporation BSS138K Rev SOT - 23 Marking : 25°C unless otherwise noted A Parameter Continuous Pulsed Parameter = 25° ...

  • Page 2

    ... Total Gate Change g Q Gate-Source Change gs Q Gate-Drain Change gd Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode V sd Forward Voltage © 2010 Fairchild Semiconductor Corporation BSS138K Rev 25°C unless otherwise noted A Test Condition = 0V, I =10µ =250µA, Referenced to 25° 50V, V ...

  • Page 3

    ... V = 10V DS 2 -25( J 2.0 1.5 1.0 0.5 2.0 2.5 3.0 3.5 4 GATE-SOURCE VOLTAGE (V) GS © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 Figure 2. On-Resistance Variation with Gate 2.00 1. 1.50 1.25 2V 1.00 0. Figure 4. On-Resistance Variation with 50 100 150 o C) Figure 6. Gate Threshold Variation with 1 ...

  • Page 4

    ... Typical Performance Characteristics Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature 100 o 150 0.0 0.2 0 Body Diode Forward Voltage [V] SD © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 (Continue -55 C 0.6 0.8 1.0 4 www.fairchildsemi.com ...

  • Page 5

    ... Physical Dimensions © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 SOT - 23 5 www.fairchildsemi.com ...

  • Page 6

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...