PSMN015-60PS,127 NXP Semiconductors, PSMN015-60PS,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN015-60PS,127
• Description: MOSFET N-CH 60V 50A SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 86W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 20.9nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.8 mOhm @ 15A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 36 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN015-60PS_2
Objective data sheet
Pin
1
2
3
mb
Type number
PSMN015-60PS
Symbol
G
D
S
D
Pinning information
Ordering information
TO-220AB
Package
Name
Description
gate
drain
source
mounting base; connected to
drain
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
Description
TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 22 February 2010
Simplified outline
SOT78 (TO-220AB)
N-channel 60 V 14.8 mΩ standard level MOSFET
1 2
mb
3
PSMN015-60PS
Graphic symbol
mbb076
G
© NXP B.V. 2010. All rights reserved.
Version
SOT78
D
S
2 of 14