PSMN015-60PS,127 NXP Semiconductors, PSMN015-60PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN015-60PS,127
• Description: MOSFET N-CH 60V 50A SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 86W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 20.9nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.8 mOhm @ 15A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 36 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN015-60PS_2
Objective data sheet
Fig 1.
Fig 3.
(A)
(A)
10
I
I
10
10
D
D
10
-1
60
40
20
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
50
Limit R
DSon
100
= V
DS
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aae028
(°C)
Rev. 02 — 22 February 2010
200
10
DC
Fig 2.
N-channel 60 V 14.8 mΩ standard level MOSFET
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
PSMN015-60PS
100
V
DS
(V)
150
t
100 μs
© NXP B.V. 2010. All rights reserved.
p
100 ms
1 ms
10 ms
T
= 10 μs
003aae029
mb
03aa16
(°C)
10
200
2
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