PSMN015-60PS,127 NXP Semiconductors, PSMN015-60PS,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN015-60PS,127
• Description: MOSFET N-CH 60V 50A SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 86W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 20.9nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.8 mOhm @ 15A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 36 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
Table 6.
PSMN015-60PS_2
Objective data sheet
Symbol
Static characteristics
V
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GSth
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
see
I
I
see
I
see
I
see
V
V
T
V
R
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 A; V
Figure 10
Figure 11
Figure 11
Figure 12
Figure 12
Figure 13
Figure 14
Figure 14
Figure 14
Figure 14
All information provided in this document is subject to legal disclaimers.
= 60 V; V
= 60 V; V
= 30 V; see
= 30 V; V
= 30 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
Rev. 02 — 22 February 2010
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
DS
GS
L
GS
GS
and
and
and
and
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 30 V; V
= 30 V; V
= 30 V; V
= 30 V; V
= V
= V
= V
= 1.2 Ω; V
Figure 16
Figure 14
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
11
GS
GS
15
15
15
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
GS
j
j
j
= 10 V
= 25 °C;
= -55 °C;
= 175 °C;
= 175 °C;
= 100 °C;
= 25 °C;
j
j
j
GS
= 25 °C
= 125 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
and
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= 10 V;
N-channel 60 V 14.8 mΩ standard level MOSFET
15
PSMN015-60PS
Min
54
60
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.03
-
10
10
28.9
-
12.6
1.3
20.9
17
6.2
3.7
2.4
4.7
4.8
1220
169
95
12
7
13
27
© NXP B.V. 2010. All rights reserved.
Max
-
-
4
4.8
-
2
30
100
100
34
23.7
14.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
pF
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
ns
ns
ns
ns
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