SI1015-A-GM Silicon Laboratories Inc, SI1015-A-GM Datasheet - Page 126

• Manufacturer Part Number: SI1015-A-GM
• Description: IC TXRX MCU + EZRADIOPRO
• Manufacturer: Silicon Laboratories Inc

Specifications of SI1015-A-GM

• Package / Case: 42-QFN
• Frequency: 240MHz ~ 960MHz
• Data Rate - Maximum: 256kbps
• Modulation Or Protocol: FSK, GFSK, OOK
• Applications: General Purpose
• Power - Output: 13dBm
• Sensitivity: -121dBm
• Voltage - Supply: 0.9 V ~ 3.6 V
• Current - Receiving: 18.5mA
• Current - Transmitting: 30mA
• Data Interface: PCB, Surface Mount
• Memory Size: 8kB Flash, 768B RAM
• Antenna Connector: PCB, Surface Mount
• Number Of Receivers: 1
• Number Of Transmitters: 1
• Wireless Frequency: 240 MHz to 960 MHz
• Interface Type: UART, SMBus, SPI, PCA
• Output Power: 13 dBm
• Operating Supply Voltage: 0.9 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Maximum Supply Current: 4 mA
• Minimum Operating Temperature: - 40 C
• Modulation: FSK, GFSK, OOK
• Protocol Supported: C2, SMBus
• Core: 8051
• Program Memory Type: Flash
• Program Memory Size: 8 KB
• Data Ram Size: 768 B
• Supply Current (max): 4 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1868-5

Si1010/1/2/3/4/5
10. On-Chip XRAM
The Si1010/1/2/3/4/5 MCUs include on-chip RAM mapped into the external data memory space (XRAM).
The external memory space may be accessed using the external move instruction (MOVX) with the target
address specified in either the data pointer (DPTR), or with the target address low byte in R0 or R1 and the
target address high byte in the External Memory Interface Control Register (EMI0CN, shown in SFR Defi-
nition 10.1).
When using the MOVX instruction to access on-chip RAM, no additional initialization is required and the
MOVX instruction execution time is as specified in the CIP-51 chapter.
Important Note: MOVX write operations can be configured to target Flash memory, instead of XRAM. See
Section “13. Flash Memory” on page 146 for more details. The MOVX instruction accesses XRAM by
default.
10.1. Accessing XRAM
The XRAM memory space is accessed using the MOVX instruction. The MOVX instruction has two forms,
both of which use an indirect addressing method. The first method uses the Data Pointer, DPTR, a 16-bit
register which contains the effective address of the XRAM location to be read from or written to. The sec-
ond method uses R0 or R1 in combination with the EMI0CN register to generate the effective XRAM
address. Examples of both of these methods are given below.
10.1.1. 16-Bit MOVX Example
The 16-bit form of the MOVX instruction accesses the memory location pointed to by the contents of the
DPTR register. The following series of instructions reads the value of the byte at address 0x1234 into the
accumulator A:

The above example uses the 16-bit immediate MOV instruction to set the contents of DPTR. Alternately,
the DPTR can be accessed through the SFR registers DPH, which contains the upper 8-bits of DPTR, and
DPL, which contains the lower 8-bits of DPTR.
10.1.2. 8-Bit MOVX Example
The 8-bit form of the MOVX instruction uses the contents of the EMI0CN SFR to determine the upper 8-bits
of the effective address to be accessed and the contents of R0 or R1 to determine the lower 8-bits of the
effective address to be accessed. The following series of instructions read the contents of the byte at
address 0x1234 into the accumulator A.
10.2. Special Function Registers
The special function register used for configuring XRAM access is EMI0CN.
126
MOV
MOVX
MOV
MOV
MOVX
DPTR, #1234h
A, @DPTR
EMI0CN, #12h
R0, #34h
a, @R0
; load DPTR with 16-bit address to read (0x1234)
; load contents of 0x1234 into accumulator A
; load high byte of address into EMI0CN
; load low byte of address into R0 (or R1)
; load contents of 0x1234 into accumulator A
Rev. 1.0