FMG2G300US60E Fairchild Semiconductor, FMG2G300US60E Datasheet
FMG2G300US60E
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FMG2G300US60E Summary of contents
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... C Description @ T = 80° 80° 25° 100° 1minute IGBT Package Code : 7PM-HA E1/ Internal Circuit Diagram FMG2G300US60E Units 600 V ± 300 A 600 A 300 A 600 A 892 °C -40 to +150 °C -40 to +125 2500 V 4.0 N.m 4.0 N.m FMG2G300US60E Rev. A ...
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... Min. Typ. Max. Units = 25°C -- 1.9 2.8 = 100° 25° 130 = 100°C -- 130 -- = 25° 100° 25°C -- 1440 2700 = 100°C -- 4095 -- Typ. Max. Units -- 0.14 °C/W °C/W -- 0.22 °C/W 0.035 -- 240 -- g FMG2G300US60E Rev ...
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... Fairchild Semiconductor Corporation Common Emitter Fig 2. Typical Saturation Voltage Characteristics Common Emitter Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter V = 300V 300A ℃ ━━ 125 ℃ ------ Ω Fig 6. Turn-Off Characteristics vs. Gate Resistance ℃ 15V ℃ ± 15V Ω FMG2G300US60E Rev ...
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... Collector Current Common Emitter Fig 10. Switching Loss vs. Collector Current 600 500 400 300 200 100 Fig 12. Forward Characteristics(diode) = ± 15V Ω ℃ ━━ 125 ℃ ------ ± 15V Ω ℃ ━━ = 125 ℃ ------ Common Cathode 25℃ 125℃ FMG2G300US60E Rev ...
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... Common Cathode di/dt = 600A/㎲ 25℃ 100℃ Fig 13. Reverse Recovery Characteristics(diode) ©2003 Fairchild Semiconductor Corporation FMG2G300US60E Rev. A ...
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... Package Dimension 2- 6.5 Ø ±0.30 Mounting-Hole 3-M5 3-16.0 ±0.50 3-10.0 ±0.50 ©2003 Fairchild Semiconductor Corporation 7PM-HA 40.0 ±0.50 23.0 23.0 ±0.50 ±0. 80.0 ±0.50 94.0 ±0.50 +0.00 2.80 - *0.5t 0.50 1.3 Ø Name Plate 28.0 ±0.50 45.5 ±0.50 Dimensions in Millimeters FMG2G300US60E Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...