FMG2G300US60E Fairchild Semiconductor, FMG2G300US60E Datasheet - Page 4

• Manufacturer Part Number: FMG2G300US60E
• Description: IGBT MOLDING 600V 300A 7PM-HA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G300US60E

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 892W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-HA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

©2003 Fairchild Semiconductor Corporation
9
6
3
0
1 0 0
Fig 7. Switching Loss vs. Gate Resistance
1 0 0 0
Fig 9. Turn-Off Characteristics vs.
Fig 11. Gate Charge Characteristics
1 0
1 0 0
1 5
1 2
1
2 0 0
0
Common Emitter
V
I
T
T
C
C
C
CC
Common Emitter
I
V
T
= 300A
C
= 25 ℃ ━━
= 125 ℃ ------
Common Emitter
V
T
T
C
CC
= 300V, V
= 300A
GE
C
C
= 25
Collector Current
4
= 300V
= 25 ℃ ━━
= 125 ℃ ------
= ± 15V, R
2 0 0
o
C
G a t e R e s i s t a n c e , R g [
GE
G a t e C h a r g e , Q
2 5 0
C o l l e c t o r C u r r e n t , I
= ± 15V
G
8
= 2 Ω
4 0 0
3 0 0
6 0 0
1 2
g
[ n C ]
Ω
C
8 0 0
]
[ A ]
3 5 0
1 6
E o n
1 0 0 0
E o f f
T o f f
T f
2 0
4 0 0
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Collector Current
Fig 12. Forward Characteristics(diode)
1 0 0 0
1 0 0
1 0 0
1 0
1
600
500
400
300
200
100
2 0 0
2 0 0
0
Common Emitter
V
T
T
Common Emitter
V
T
T
0
Collector Current
GE
C
C
C
C
GE
= 25 ℃ ━━
= 125 ℃ ------
= 25 ℃ ━━
= 125 ℃ ------
Common Cathode
V
T
T
= ± 15V, R
= ± 15V, R
C
C
GE
= 25℃
= 125℃
= 0V
C o l l e c t o r C u r r e n t , I
2 5 0
2 5 0
C o l l e c t o r C u r r e n t , I
G
G
F o r w a r d V o l t a g e ,
= 2 Ω
1
= 2 Ω
3 0 0
3 0 0
2
C
[ A ]
C
V
[ A ]
3 5 0
3 5 0
F
[ V ]
3
FMG2G300US60E Rev. A
E o f f
T o n
E o n
T r
4 0 0
4 0 0
4