QSD2030 Fairchild Semiconductor, QSD2030 Datasheet - Page 2

• Manufacturer Part Number: QSD2030
• Description: Photodiodes T-1 3- 4 SENSOR
• Manufacturer: Fairchild Semiconductor
• Type: Plastic Silicon PIN Photodioder

Specifications of QSD2030

• Lens Type: Clear Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 880 nm
• Half Intensity Angle Degrees: 20 deg
• Maximum Reverse Voltage: 50 V
• Maximum Power Dissipation: 100 mW
• Maximum Light Current: 25 uA
• Maximum Dark Current: 10 nA
• Maximum Rise Time: 5 ns
• Maximum Fall Time: 5 ns
• Package / Case: T-1 3/4
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Forward Voltage: 1.3V
• Dark Current (max): 10nA
• Power Dissipation: 100mW
• Light Current: 25uA
• Rise Time: 5ns
• Fall Time: 5ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
QSD2030 Rev. 1.1.0
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
Electrical/Optical Characteristics
Symbol
V
I
I
C
PS
SR
t
t
D
L
r
f
F
Symbol
T
T
T
T
SOL-F
V
SOL-I
OPR
P
STG
BR
D
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Forward Voltage
Reverse Dark Current
Reverse Light Current
Capacitance
Rise Time
Fall Time
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Reverse Breakdown Voltage
Power Dissipation
(T
A
= 25°C unless otherwise specified)
(1)
Parameter
I
V
Ee = 0.5mW/cm
V
V
(T
F
R
R
R
= 950nm
A
= 80mA
= 10V, Ee = 0
= 0, f = 1MHz, Ee = 0
= 5V, R
=25°C)
Test Conditions
(2,3,4)
(2,3)
L
2
= 50 ,
2
, V
R
= 950nm
= 5V,
260 for 10 sec
Min.
240 for 5 sec
400
-40 to +100
-40 to +100
15
Rating
100
50
Typ.
±20
880
1.3
25
60
5
5
Max.
1100
10
www.fairchildsemi.com
Unit
mW
°C
°C
°C
°C
V
Units
nm
nm
nA
µA
pF
ns
V
°