QSD2030 Fairchild Semiconductor, QSD2030 Datasheet - Page 3
QSD2030
Manufacturer Part Number
QSD2030
Description
Photodiodes T-1 3- 4 SENSOR
Manufacturer
Fairchild Semiconductor
Type
Plastic Silicon PIN Photodioder
Specifications of QSD2030
Lens Type
Clear Epoxy
Photodiode Material
Silicon
Peak Wavelength
880 nm
Half Intensity Angle Degrees
20 deg
Maximum Reverse Voltage
50 V
Maximum Power Dissipation
100 mW
Maximum Light Current
25 uA
Maximum Dark Current
10 nA
Maximum Rise Time
5 ns
Maximum Fall Time
5 ns
Package / Case
T-1 3/4
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Forward Voltage
1.3V
Dark Current (max)
10nA
Power Dissipation
100mW
Light Current
25uA
Rise Time
5ns
Fall Time
5ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QSD2030
Manufacturer:
FSC
Quantity:
9 250
Company:
Part Number:
QSD2030
Manufacturer:
VISHAY
Quantity:
100
Company:
Part Number:
QSD2030F
Manufacturer:
TOSHIBA
Quantity:
20 980
©2005 Fairchild Semiconductor Corporation
QSD2030 Rev. 1.1.0
Typical Performance Characteristics
55
50
45
40
35
30
25
20
15
10
14
12
10
Figure 1. Reverse Light Current vs. Emitter Output Power
5
0
8
6
4
2
0
0.0
0
V
T
A
R
= 25°C
= 5V
Figure 3. Capacitance vs. Reverse Voltage
0.1
2
4
0.2
Ee–Emitter output power (mw/cm
6
Vr–Reverse Voltage (V)
0.3
8
0.4
10
0.5
12
0.6
14
0.7
16
2
)
0.8
18
0.9
20
3
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
0.7
0
T
A
= 25°C
Figure 4. Dark Current vs. Reverse Voltage
5
Figure 2. Angular Response
10
VR–Break Down Voltage (V)
15
0°
10°
20
20°
25
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30
30°
50°
60°
70°
40°
80°
90°
35