PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet - Page 2

• Manufacturer Part Number: PSMN011-80YS
• Description: MOSFET,N CH,80V,67A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN011-80YS
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN011-80YS
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base; connected to
drain
Table 1.
LFPAK
Package
Name
Symbol
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
DS(AL)S
GD
G(tot)
Quick reference data
Parameter
gate-drain charge
total gate charge
non-repetitive
drain-source avalanche
energy
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
Simplified outline
SOT669 (LFPAK)
…continued
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
1 2 3 4
Conditions
V
V
see
V
I
R
D
mb
GS
DS
GS
GS
= 67 A; V
Figure 15
= 10 V; I
= 40 V; see
= 10 V; T
= 50 Ω; unclamped
sup
D
j(init)
= 25 A;
≤ 80 V;
Figure
= 25 °C;
Graphic symbol
PSMN011-80YS
14;
mbb076
G
Min
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
11
45
-
Version
Max Unit
-
-
121
2 of 15
nC
nC
mJ