PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet - Page 5

• Manufacturer Part Number: PSMN011-80YS
• Description: MOSFET,N CH,80V,67A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN011-80YS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
−1
−2
−3
1
1
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
−6
Thermal characteristics
0.02
0.05
δ = 0.5
0.2
0.1
single shot
Parameter
thermal resistance from junction to
mounting base
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 02 — 28 October 2010
10
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Conditions
see
−3
Figure 4
10
−2
PSMN011-80YS
Min
-
10
−1
Typ
0.5
t
p (s)
© NXP B.V. 2010. All rights reserved.
003a a d342
Max
1.3
1
Unit
K/W
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