PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet - Page 9

• Manufacturer Part Number: PSMN011-80YS
• Description: MOSFET,N CH,80V,67A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN011-80YS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
20
17
14
11
10
8
5
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 5
20
10
64V
40
20
16V
60
30
80
40
V
All information provided in this document is subject to legal disclaimers.
10
003aad312
003aad335
DS
Q
I
G
D
= 40V
(A)
(nC)
5.5
20
6
8
Rev. 02 — 28 October 2010
100
50
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
PSMN011-80YS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aad336
(V)
C
C
C
oss
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iss
10
2
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