PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet - Page 4

• Manufacturer Part Number: PSMN011-80YS
• Description: MOSFET,N CH,80V,67A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN011-80YS
Product data sheet
Fig 3.
10
10
10
(A)
10
I
-1
D
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
DC
Rev. 02 — 28 October 2010
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
10
100 ms
100 μ s
10 ms
10 μ s
1 ms
2
PSMN011-80YS
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
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