PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet - Page 7

• Manufacturer Part Number: PSMN011-80YS
• Description: MOSFET,N CH,80V,67A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN011-80YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
(S)
100
g
D
100
fs
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
20
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
10
1
8
40
…continued
6
60
2
V
GS
80
All information provided in this document is subject to legal disclaimers.
(V) = 4.5
003aad311
003aad338
V
DS
I
D
(A)
(V)
5.5
5
Rev. 02 — 28 October 2010
100
Conditions
I
see
I
V
S
S
3
GS
= 25 A; V
= 40 A; dI
Figure 17
= 0 V; V
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 40 V
(pF)
(A)
4000
3500
3000
2500
2000
1500
1000
I
C
D
100
80
60
40
20
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
j
0
0
= 25 °C;
5
2
PSMN011-80YS
10
T
j
Min
-
-
-
= 175 °C
15
4
Typ
0.8
54
98
© NXP B.V. 2010. All rights reserved.
20
T
V
j
003aad333
GS
003aad337
= 25 °C
V
C
C
GS
(V)
iss
rss
Max
1.2
-
-
(V)
25
6
Unit
V
ns
nC
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