PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet - Page 8

• Manufacturer Part Number: PSMN011-80YS
• Description: MOSFET,N CH,80V,67A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN011-80YS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(mΩ)
(A)
I
10
10
10
10
10
10
D
DSon
30
25
20
15
10
−1
−2
−3
−4
−5
−6
5
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
4
8
2
min
12
typ
4
16
max
V
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GS
003aad339
V
GS
(V)
03aa35
(V)
Rev. 02 — 28 October 2010
20
6
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.8
1.2
0.6
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN011-80YS
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aae090
003aad280
T
T
j
j
(°C)
( ° C)
180
180
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