4N35FM Fairchild Semiconductor, 4N35FM Datasheet - Page 2

• Manufacturer Part Number: 4N35FM
• Description: Transistor Output Optocouplers Optocoupler Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of 4N35FM

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical Characteristics
Individual Component Characteristics
Isolation Characteristics
*Typical values at T
TOTAL DEVICE
EMITTER
DETECTOR
EMITTER
DETECTOR
Symbol
Symbol
Symbol
BV
BV
BV
I
T
V
V
V
T
T
F
R
C
I
I
V
C
OPR
P
V
P
P
CEO
CBO
STG
SOL
CEO
CBO
ECO
(pk)
V
I
I
ISO
ISO
ISO
F
CEO
CBO
ECO
CE
R
D
R
D
D
F
Storage Temperature
Operating Temperature
Wave solder temperature (see page 8 for reflow solder profile)
Total Device Power Dissipation @ T
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T
Input Forward Voltage
Reverse Leakage Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Derate above 25°C
Derate above 25°C
Derate above 25°C
A
= 25°C
Parameter
(T
A
(T
= 25°C unless otherwise specified)
Parameter
A
A
= 25°C unless otherwise specified)
= 25°C
A
= 25°C
A
= 25°C
I
V
I
I
I
V
V
V
f = 60Hz, t = 1 sec
V
V
F
C
C
E
2
R
CE
CB
CE
I-O
I-O
Test Conditions
Test Conditions
= 10mA
= 100µA, I
= 1.0mA, I
= 100µA, I
= 6.0V
= 10V, I
= 10V
= 0V, f = 1 MHz
= 500 VDC
= &, f = 1MHz
F
F
F
F
= 0
= 0
= 0
= 0
Min. Typ.* Max.
7500
10
Min.
30
70
7
11
260 for 10 sec
-40 to +150
-40 to +100
Value
2.94
1.41
1.76
250
120
150
60
30
70
0.2
Typ.*
6
3
7
0.001
1.18
100
120
10
1
8
2
Max.
1.50
10
50
20
www.fairchildsemi.com
mW/°C
mW/°C
Units
Vac(pk)
Units
mW
mW
mW
mA
°C
°C
°C
V
A
V
V
V
pF
Unit
µA
nA
nA
pF
V
V
V
V