4N35FM Fairchild Semiconductor, 4N35FM Datasheet - Page 4

• Manufacturer Part Number: 4N35FM
• Description: Transistor Output Optocouplers Optocoupler Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of 4N35FM

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
Typical Performance Curves
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-60
10
1
Fig. 3 Normalized CTR vs. Ambient Temperature
Normalized to
I
T
Fig. 1 LED Forward Voltage vs. Forward Current
F
A
= 10 mA
= 25 C
-40
Fig. 5 CTR vs. RBE (Saturated)
I
F
T
-20
A
- LED FORWARD CURRENT (mA)
- AMBIENT TEMPERATURE ( C)
R
BE
I
F
- BASE RESISTANCE (k
= 20 mA
0
I
F
= 10 mA
100
10
20
T
T
T
I
A
A
A
I
F
F
= -55 C
= 25 C
= 100 C
I
= 5 mA
I
= 10 mA
F
F
= 20 mA
= 5 mA
40
60
V
CE
80
= 0.3 V
1000
100
100
4
0.001
0.01
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
10
1
0.01
10
0
I
F
T
V
T
A
A
= 20 mA
CE
= 25˚C
Fig. 6 Collector-Emitter Saturation Voltage
Fig. 2 Normalized CTR vs. Forward Current
= 25 C
2
= 5.0V
I
F
= 5 mA
Fig. 4 CTR vs. RBE (Unsaturated)
I
4
F
= 10 mA
I
C
I
I
F
- COLLECTOR CURRENT (mA)
F
R
vs. Collector Current
= 2.5 mA
6
- FORWARD CURRENT (mA)
BE
0.1
- BASE RESISTANCE (k
8
I
F
= 10 mA
100
10
I
F
V
= 5 mA
CE
12
I
= 5.0 V
F
= 20 mA
1
14
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Normalized to
I
F
16
= 10 mA
18
1000
20
10