SGB04N60 Infineon Technologies, SGB04N60 Datasheet - Page 10

• Manufacturer Part Number: SGB04N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 4A
• Manufacturer: Infineon Technologies

Specifications of SGB04N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 9.4 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 9.4 A
• Ic(max) @ 100°: 4.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure B. Definition of switching losses
Published by
Infineon Technologies AG,
Figure A. Definition of switching times
10
p(t)
T (t)
j
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
1
r
1
SGB04N60
r
2
2
r
2
Rev. 2.3
=180nH
=180pF.
r
n
n
r
n
Nov 06
T
C