SGB04N60 Infineon Technologies, SGB04N60 Datasheet - Page 7

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SGB04N60

Manufacturer Part Number
SGB04N60
Description
IGBT Transistors FAST IGBT NPT TECH 600V 4A
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGB04N60

Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-263-3
Continuous Collector Current Ic Max
9.4 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
9.4 A
Ic(max) @ 100°
4.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGB04N60
Manufacturer:
INFINEON
Quantity:
12 500
0.3mJ
0.2mJ
0.1mJ
0.0mJ
0.6mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
GE
= 4A, R
0A
= 0/+15V, R
0°C
*) E
due to diode recovery.
*) E
due to diode recovery.
T
G
E
j
I
E
,
on
on
C
= 67 ,
2A
E
on
JUNCTION TEMPERATURE
,
off
and E
and E
ts
*
COLLECTOR CURRENT
*
50°C
G
j
CE
ts
ts
= 67 ,
= 150 C, V
include losses
include losses
4A
= 400V, V
100°C
6A
CE
GE
= 400V,
= 0/+15V,
8A
150°C
E
E
E
ts
off
on
*
*
10A
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
10
10
10
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
10
GE
-1
-2
-3
0
K/W
K/W
K/W
K/W
0
= 0/+15V, I
p
1µs
/ T)
0.02
0.01
0.05
0.2
0.1
D=0.5
*) E
due to diode recovery.
E
E
E
single pulse
ts
on
off
on
*
10µs 100µs
50
*
and E
R
C
G
t
p
,
= 4A,
,
j
GATE RESISTOR
ts
= 150 C, V
PULSE WIDTH
include losses
100
R
SGB04N60
0.815
0.698
0.941
0.046
R , ( K / W )
1m s
1
C
1
=
CE
150
1
/ R
Rev. 2.3
10m s 100m s
= 400V,
1
C
0.0407
5.24*10
4.97*10
4.31*10
2
=
, ( s )
200
2
/R
R
2
-3
-4
-5
Nov 06
2
1s

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