SGB04N60 Infineon Technologies, SGB04N60 Datasheet - Page 6

• Manufacturer Part Number: SGB04N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 4A
• Manufacturer: Infineon Technologies

Specifications of SGB04N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 9.4 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 9.4 A
• Ic(max) @ 100°: 4.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
10ns
10ns
C
GE
= 4A, R
0A
= 0/+15V, R
0°C
t
r
T
G
t
t
t
f
j
I
d(off)
d(on)
2A
,
C
= 67 ,
JUNCTION TEMPERATURE
,
COLLECTOR CURRENT
50°C
G
j
CE
= 67 ,
= 150 C, V
4A
= 400V, V
100°C
6A
CE
GE
= 400V,
= 0/+15V,
8A
t
t
f
t
d(off)
d(on)
t
150°C
r
10A
6
100ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
10ns
C
GE
= 0.2mA)
0
= 0/+15V, I
-50°C
t
d(off)
t
f
T
j
,
50
JUNCTION TEMPERATURE
R
C
G
,
0°C
= 4A,
j
GATE RESISTOR
= 150 C, V
100
50°C
SGB04N60
CE
150
Rev. 2.3
= 400V,
100°C
200
t
150°C
d(on)
max.
t
typ.
min.
r
Nov 06