SGB04N60 Infineon Technologies, SGB04N60 Datasheet - Page 2

no-image

SGB04N60

Manufacturer Part Number
SGB04N60
Description
IGBT Transistors FAST IGBT NPT TECH 600V 4A
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGB04N60

Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
TO-263-3
Continuous Collector Current Ic Max
9.4 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
9.4 A
Ic(max) @ 100°
4.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SGB04N60
Manufacturer:
INFINEON
Quantity:
12 500
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
collector connection. PCB is vertical without blown air.
2)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
1)
j
= 25 C, unless otherwise specified
Symbol
R
R
R
V
V
V
I
I
g
C
C
C
Q
L
I
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
t h J A
i s s
o s s
r s s
G a t e
V
V
T
T
I
V
T
T
V
V
V
V
f= 1 MH z
V
V
V
V
T
C
G E
G E
j
j
C E
j
j
C E
C E
C E
G E
C C
G E
G E
C C
j
=2 5 C
=1 5 0 C
= 20 0 A , V
=2 5 C
=1 5 0 C
2
= 60 0 V, V
= 0V , V
= 20 V , I
= 25 V ,
= 0V , I
= 0V ,
= 48 0 V, I
= 15 V
= 15 V ,t
= 15 V , I
Conditions
Conditions
1 5 0 C
6 0 0 V,
2
(one layer, 70 m thick) copper area for
C
G E
S C
= 5 00 A
C
C E
=2 0 V
= 4 A
G E
C
C
=4 A
= 4 A
10 s
= V
= 0 V
G E
min.
600
1.7
3
-
-
-
-
-
-
-
-
-
-
Max. Value
SGB04N60
Value
Typ.
264
2.5
2.0
2.3
3.1
62
40
29
17
24
40
4
7
-
-
-
-
Rev. 2.3
max.
500
100
317
2.4
2.8
20
35
20
31
5
-
-
-
-
Nov 06
Unit
K/W
Unit
V
nA
S
pF
nC
nH
A
A

Related parts for SGB04N60