SGB04N60 Infineon Technologies, SGB04N60 Datasheet - Page 5

• Manufacturer Part Number: SGB04N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 4A
• Manufacturer: Infineon Technologies

Specifications of SGB04N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 9.4 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 9.4 A
• Ic(max) @ 100°: 4.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

15A
12A
14A
12A
10A
Figure 7. Typical transfer characteristics
(V
9A
6A
3A
0A
8A
6A
4A
2A
0A
Figure 5. Typical output characteristics
(T
0V
CE
0V
j
= 25 C)
= 10V)
V
CE
V
V
,
GE
2V
GE
COLLECTOR
1V
=20V
,
15V
13V
11V
9V
7V
5V
GATE
4V
-
2V
EMITTER VOLTAGE
-
EMITTER VOLTAGE
6V
3V
T
j
+150°C
=+25°C
-55°C
8V
4V
10V
5V
5
15A
12A
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
9A
6A
3A
0A
Figure 6. Typical output characteristics
(T
GE
0V
j
= 150 C)
= 15V)
V
CE
-50°C
V
,
T
GE
COLLECTOR
1V
j
,
=20V
JUNCTION TEMPERATURE
15V
13V
11V
9V
7V
5V
0°C
2V
-
EMITTER VOLTAGE
50°C
SGB04N60
3V
Rev. 2.3
100°C
I
I
C
C
= 8A
= 4A
4V
150°C
Nov 06
5V