SGB04N60 Infineon Technologies, SGB04N60 Datasheet - Page 4

• Manufacturer Part Number: SGB04N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 4A
• Manufacturer: Infineon Technologies

Specifications of SGB04N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 9.4 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 9.4 A
• Ic(max) @ 100°: 4.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20A
10A
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
0A
60W
50W
40W
30W
20W
10W
GE
j
j
10Hz
0W
= 0/+15V, R
25°C
150 C, D = 0.5, V
150 C)
f,
100Hz
T
SWITCHING FREQUENCY
50°C
C
,
I
c
T
CASE TEMPERATURE
C
G
=110°C
= 67 )
1kHz
75°C
T
CE
C
=80°C
= 400V,
100°C
10kHz
I
c
125°C
100kHz
4
0.01A
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
12A
10A
1A
8A
6A
4A
2A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
C
CASE TEMPERATURE
10V
= 25 C, T
150 C)
75°C
-
EMITTER VOLTAGE
SGB04N60
j
100V
100°C
150 C)
Rev. 2.3
125°C
1000V
50 s
t
15 s
DC
1ms
200 s
p
=2 s
Nov 06