SGB04N60 Infineon Technologies, SGB04N60 Datasheet - Page 3

• Manufacturer Part Number: SGB04N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 4A
• Manufacturer: Infineon Technologies

Specifications of SGB04N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 9.4 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 9.4 A
• Ic(max) @ 100°: 4.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
j
C C
G E
j
C C
G E
G
G
=2 5 C ,
=1 5 0 C
1 )
1 )
1 )
1 )
=67 ,
= 67 ,
3
= 40 0 V, I
= 0/ 15 V ,
= 40 0 V, I
= 0/ 15 V ,
Conditions
Conditions
= 18 0 nH ,
= 18 0 pF
= 18 0 nH ,
= 18 0 pF
C
C
= 4 A,
=4 A ,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SGB04N60
Value
Value
0.070
0.061
0.131
0.115
0.111
0.226
typ.
typ.
237
264
104
22
15
70
22
16
Rev. 2.3
0.081
0.079
0.160
0.132
0.144
0.277
max.
max.
284
317
125
26
18
84
26
19
Nov 06
Unit
ns
mJ
Unit
ns
mJ