SGB04N60 Infineon Technologies, SGB04N60 Datasheet - Page 8

• Manufacturer Part Number: SGB04N60
• Description: IGBT Transistors FAST IGBT NPT TECH 600V 4A
• Manufacturer: Infineon Technologies

Specifications of SGB04N60

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 9.4 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 9.4 A
• Ic(max) @ 100°: 4.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
25 s
20 s
15 s
10 s
25V
20V
15V
10V
5 s
0 s
CE
5V
0V
10V
Figure 17. Typical gate charge
(I
0nC
C
= 600V, start at T
= 4A)
V
GE
11V
,
Q
GATE
10nC
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
120V
j
= 25 C)
20nC
13V
14V
480V
30nC
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(V
100pF
CE
10pF
70A
60A
50A
40A
30A
20A
10A
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
600V, T
V
CE
= 0V, f = 1MHz)
V
,
GE
COLLECTOR
12V
,
j
GATE
= 150 C)
10V
14V
-
EMITTER VOLTAGE
-
EMITTER VOLTAGE
SGB04N60
20V
16V
Rev. 2.3
18V
30V
C
C
C
rss
oss
iss
Nov 06
20V