FGH40N60SFTU Fairchild Semiconductor, FGH40N60SFTU Datasheet - Page 3

• Manufacturer Part Number: FGH40N60SFTU
• Description: IGBT 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SFTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SF Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0.0
25
0
T
Common Emitter
V
T
T
C
Common Emitter
V
Temperature at Variant Current Level
GE
C
C
Collector-EmitterCase Temperature, T
GE
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
C
1.5
50
1
3.0
20V
75
2
I
C
= 20A
80A
40A
15V
V
GE
4.5
100
CE
CE
3
= 8V
12V
[V]
10V
[V]
C
[
o
C
]
6.0
125
4
3
Figure 2. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 6. Saturation Voltage vs. V
120
100
120
80
60
40
20
20
16
12
80
40
0
8
4
0
0.0
0
4
6
T
C
Common Emitter
V
T
T
CE
C
C
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
o
C
C
o
I
Gate-Emitter Voltage, V
C
C
1.5
Gate-Emitter Voltage,V
8
= 20A
8
40A
3.0
12
20V
10
80A
Common Emitter
T
C
GE
= -40
GE
4.5
16
CE
15V
[V]
[V]
V
o
[V]
C
GE
12V
10V
12
= 8V
GE
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6.0
20
13