FGH40N60SFTU Fairchild Semiconductor, FGH40N60SFTU Datasheet - Page 5

• Manufacturer Part Number: FGH40N60SFTU
• Description: IGBT 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SFTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SF Rev. A
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs. Collector Current
1000
5500
100
500
100
10
10
0.1
30
10
20
1
0
20
Common Emitter
V
I
T
T
Common Emitter
V
T
T
C
CC
C
C
GE
C
C
Common Emitter
V
T
T
= 40A
C
C
GE
= 25
= 125
= 25
= 125
Gate Resistance
Collector Current
= 400V, V
= 15V, R
= 25
= 125
= 15V, R
30
o
o
10
C
C
o
o
o
C
C
C
o
Gate Resistance, R
C
Collector Current, I
Collector Current, I
G
GE
G
= 10
40
= 10
40
= 15V
Ω
20
Ω
50
30
G
60
C
t
C
d(off)
[
60
Ω
[A]
[A]
t
f
]
t
40
d(off)
t
f
E
E
70
off
on
80
50
80
5
Figure 16. Switching Loss vs. Gate Resistance
Figure 18. Load Current vs. Frequency
Figure 14. Turn-on Characteristics vs.
500
100
140
120
100
0.3
10
80
60
40
20
10
0.2
0
1
20
1
0
Duty cycle : 50%
T
Power Dissipation = 116W
Common Emitter
V
T
T
C
Common Emitter
V
I
T
T
C
C
C
GE
C
C
CC
= 100
= 40A
= 25
= 125
= 25
= 125
= 15V, R
= 400V, V
o
o
o
10
C
o
C
C
o
C
C
Collector Current, I
Gate Resistance, R
G
Collector Current
Frequency [kHz]
= 10
GE
40
10
V
load Current : peak of square wave
CC
= 15V
Ω
20
= 400V
30
C
100
60
G
[A]
[
Ω
]
40
t
d(on)
t
E
E
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r
on
off
1000
80
50