FGH40N60SFTU Fairchild Semiconductor, FGH40N60SFTU Datasheet - Page 4

• Manufacturer Part Number: FGH40N60SFTU
• Description: IGBT 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SFTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SF Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
5000
4000
3000
2000
1000
0.01
400
100
0.1
10
20
16
12
0
1
8
4
0
0.1
4
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
40A
I
8
C
= 20A
C
C
C
iss
oss
10
rss
1
12
80A
Common Emitter
V
T
C
GE
100
Common Emitter
T
C
= 25
GE
= 0V, f = 1MHz
= 25
CE
16
CE
o
[V]
GE
[V]
C
o
10
[V]
C
100
10 ms
1ms
10
DC
µ
µ
s
s
1000
20
30
4
Figure 10. Gate charge Characteristics
Figure 8. Saturation Voltage vs. V
100
200
20
16
12
15
12
Figure 12. Turn-on Characteristics vs.
10
8
4
0
9
6
3
0
4
0
0
Common Emitter
T
C
= 25
o
t
C
r
10
I
C
Gate-Emitter Voltage, V
40A
t
d(on)
= 20A
8
Gate Resistance, R
Gate Charge, Q
V
50
cc
= 100V
20
Gate Resistance
12
80A
Common Emitter
V
I
T
T
C
CC
C
C
30
= 40A
g
300V
= 25
= 125
= 400V, V
Common Emitter
T
100
[nC]
C
G
GE
o
= 125
[
C
o
Ω
16
C
[V]
]
200V
40
o
GE
C
= 15V
GE
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150
20
50