FDM6296 Fairchild Semiconductor, FDM6296 Datasheet

MOSFET N-CH 30V 11.5A POWER33

FDM6296

Manufacturer Part Number
FDM6296
Description
MOSFET N-CH 30V 11.5A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDM6296

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10.5 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Input Capacitance (ciss) @ Vds
2005pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDM6296
FDM6296TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDM6296
Manufacturer:
KILOG
Quantity:
10
Part Number:
FDM6296
Quantity:
3 000
©2006 Fairchild Semiconductor Corporation
FDM6296 Rev.E
FDM6296
Single N-Channel Logic-Level PowerTrench
30V,11.5A, 10.5mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJC
θJA
Max r
Max r
Low Qg, Qgd and Rg for efficient switching performance
RoHS Compliant
, T
Symbol
Device Marking
STG
5
DS(on)
DS(on)
6296
6
= 10.5mΩ at V
= 15mΩ at V
7
Bottom
8
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4
GS
GS
3
= 4.5V, I
= 10V, I
2
FDM6296
-Continuous
Device
1
-Pulsed
Power 33
D
D
= 10A
= 11.5A
T
A
= 25°C unless otherwise noted
D
Parameter
D
D
Power 33
Package
D
Top
1
S
General Description
This single N-channel MOSFET in the thermally efficient
MicroFET package has been specifically designed to perform
well in Point of Load converters. Providing an optimized balance
between r
used as a “high side” control switch or “low side” synchronous
rectifier.
Application
Point of Load Converter
1/16 Brick Synchronous Rectifier
S
S
G
DS(on)
Reel Size
7’’
and gate charge this device can be effectively
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
D
D
D
D
5
6
7
8
Tape Width
®
8mm
MOSFET
-55 to +150
Ratings
11.5
±20
2.1
0.9
3.0
60
30
40
January 2007
www.fairchildsemi.com
3000 units
Quantity
4
3
2
1
Units
°C/W
G
S
S
S
°C
W
V
V
A
tm

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FDM6296 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 6296 FDM6296 ©2006 Fairchild Semiconductor Corporation FDM6296 Rev.E General Description = 11.5A This single N-channel MOSFET in the thermally efficient D MicroFET package has been specifically designed to perform = 10A D well in Point of Load converters. Providing an optimized balance ...

Page 2

... Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDM6296 Rev 25°C unless otherwise noted J Test Conditions I = 250μ 250μA, referenced to 25°C ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature 40 μ PULSE DURATION = 300 s DUTY CYCLE = 2.0%MAX 0.5 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDM6296 Rev 25°C unless otherwise noted 3.0V GS μ s 0.6 0.8 1.0 75 100 125 150 ( 125 ...

Page 4

... A 0.01 0 DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 1E FDM6296 Rev 25°C unless otherwise noted J 1000 V = 15V DD = 20V 100 100us 1ms 10ms 100ms 1s 10s DC 10 100 SINGLE PULSE ...

Page 5

... FDM6296 Rev.E 5 www.fairchildsemi.com ...

Page 6

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDM6296 Rev. E OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...

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