FDM6296 Fairchild Semiconductor, FDM6296 Datasheet - Page 2

• Manufacturer Part Number: FDM6296
• Description: MOSFET N-CH 30V 11.5A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDM6296

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 2005pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDM6296; FDM6296TR

FDM6296 Rev.E
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
BV
ΔBV
I
I
V
r
g
C
C
C
Rg
t
t
t
t
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
(a)R
(b)R
GS(th)
SD
iss
oss
rss
ΔT
ΔT
g
gs
gd
rr
user's board design.
Symbol
DSS
θJA
GS(th)
DSS
J
J
θJA
θJA
is determined with the device mounted on a 1 in
= 60°C/W when mounted on a 1 in
= 135°C/W when mounted on a minimum pad of 2 oz copper.
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
2
pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
a. 60°C/W when mounted on
a 1 in
T
2
2
J
pad of 2 oz copper
oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
I
I
V
V
V
f = 1MHz
V
V
I
D
I
D
D
F
D
GS
GS
GS
GS
DS
DD
GS
GS
DD
DS
GS
GS
DS
DS
= 250μA, referenced to 25°C
= 11.5A, di/dt = 100A/μs
= 250μA, V
= 250μA, referenced to 25°C
= 11.5A
= 10V, I
= 5V, I
= 5V
= V
= 10V, I
= 4.5V, I
= 15V, I
= 10V, R
= 15V
= 24V, V
= 15V, V
= 15mV, f = 1MHz
= 0V, I
= ±20V, V
2
DS
Test Conditions
, I
S
D
D
D
D
D
= 2A
D
= 11.5A
GEN
GS
GS
GS
= 1.0A
= 11.5A , T
= 11.5A
DS
= 250μA
= 10A
= 0V
= 0V,
= 0V
= 0V
= 6Ω
(Note 2)
J
= 125°C
θJC
is guaranteed by design while R
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
Min
30
1
1507
0.9
10.6
Typ
29
20
10
27
13
12
415
128
1.9
8.7
1.1
29
13
47
5
4
3
-5
θJA
±100
Max
2005
10.5
1.2
20
10
44
23
17
555
170
is determined by the
www.fairchildsemi.com
15
17
1
3
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
pF
pF
pF
V
V
V
S
Ω