FDM6296 Fairchild Semiconductor, FDM6296 Datasheet - Page 4

• Manufacturer Part Number: FDM6296
• Description: MOSFET N-CH 30V 11.5A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDM6296

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 2005pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDM6296; FDM6296TR

FDM6296 Rev.E
Typical Characteristics
0.01
100
10
Figure 7.
0.1
10
8
6
4
2
0
1
1E-3
0.01
0.1
0
0.1
r
2
1
I
SINGLE PULSE
T
R
T
DS(on)
10
D
Figure 9. Forward Bias Safe
J
A
θ
JA
= 11.5A
= MAX RATED
= 25
-4
= 135
V DS , DRAIN to SOURCE VOLTAGE (V)
LIMITED
o
C
Gate Charge Characteristics
5
o
C/W
Operating Area
Q
DUTY CYCLE-DESCENDING ORDER
D = 0.5
g
, GATE CHARGE(nC)
1
V
0.2
0.1
0.05
0.02
0.01
DD
10
10
= 10V
-3
V
DD
SINGLE PULSE
R
= 20V
T
θ
Figure 11. Transient Thermal Response Curve
JA
J
15
= 25°C unless otherwise noted
= 135
V
10
DD
10
o
= 15V
C/W
-2
20
t, RECTANGULAR PULSE DURATION (s)
1ms
10ms
100us
100ms
1s
10s
DC
100
25
10
-1
4
100
1000
500
3000
0.5
10
100
10
30
1
10
0
0.1
Figure 10.
-4
Figure 8.
SINGLE PULSE
R
f = 1MHz
V
10
θ
GS
JA
-3
V
= 0V
= 135
DS
NOTES:
DUTY FACTOR: D = t
PEAK T
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
10
t, PULSE WIDTH (s)
10
Single Pulse Maximum
Capacitance vs Drain
o
C/W
-2
1
J
= P
10
DM
-1
1
x Z
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
P
θJA
A
I = I
DM
= 25
1
10
/t
x R
2
25
10
0
o
θJA
C
2
t
o
1
+ T
C DERATE PEAK
10
150 T
----------------------- -
t
2
A
125
1
–
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A
C
C
C
10
iss
oss
rss
10
2
10
3
10
3