NDS9400A Fairchild Semiconductor, NDS9400A Datasheet - Page 4

• Manufacturer Part Number: NDS9400A
• Description: MOSFET P-CH 30V 3.4A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9400A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9400ATR

Typical Electrical Characteristics
-10
-8
-6
-4
-2
0
-20
-15
-10
1.6
1.4
1.2
0.8
0.6
-1
-5
0
1
Figure 3. On-Resistance Variation with
Figure 5. Transfer Characteristics.
-50
0
Figure 1. On-Region Characteristics.
V
DS
Temperature.
-25
V
= -10V
I
D
G S
-2
= -3.4A
-1
= -10V
V
GS
0
V
T , JUNCTION TEMPERATURE (°C)
V
DS
J
, GATE TO SOURCE VOLTAGE (V)
GS
, DRAIN-SOURCE VOLTAGE (V)
= -10V
2 5
-3
-2
T = -55°C
J
5 0
-8.0
-7.0
-4
-3
7 5
-6.0
25°C
-5.5
100
-5.0
-4.5
-5
125°C
-4
-4.0
-3.5
125
-3.0
150
-6
-5
1.2
1.1
0.9
0.8
0.7
1.5
0.5
2.5
1.5
0.5
1
2
1
Figure 4. On-Resistance Variation with Drain
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
-50
3
2
1
0
0
V
V
Current and Temperature.
Temperature.
GS
Voltage and Drain Current.
-25
GS
= -10V
= -3.5V
-3
-3
0
T , JUNCTION TEMPERATURE (°C)
J
-4.0
I
I
D
D
2 5
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
-6
-6
-4.5
5 0
T = 125°C
-9
-9
J
-5.0
7 5
-5.5
I
100
V
D
DS
25°C
= -250µA
-12
-6.0
-12
= V
-7.0
-55°C
-8.0
GS
125
NDS9400A.SAM
-10
150
-15
-15